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In the production of epitaxial layer, various defects may appear due to imperfect substrate quality, process-related pollution and coating process. For safe and reliable detection, there are various complex detection methods to choose from. In particular, photoluminescence and DIC microscopy can reliably detect critical crystal defects, and in some cases, if not detected in time, it may lead to component failure.
 
Detection of exposure and injection errors and control of overlap offset and CD value are very important for complex manufacturing of microelectronic products. Intego's inspection and measurement systems are also supported by its proprietary CAD-based defect detection and wafer yield prediction software. In addition to the classical evaluation algorithm, it also provides an advanced neural network for defect detection and classification.
 
 
Detection of unpatterned epitaxial wafer
 
Carry out front and back inspection at the same time
 
 
Rapid micro and macro defect detection
 
 
Submicron sensitivity detection using laser scattering, PL and DIC imaging techniques
 
 
Detect pits, bumps, particles, coating defects, color changes, etching residues, haze, stacking faults, triangles, carrots, base dislocations, slip lines, etc.
 
 
 
Patterned wafer detection
 
 
Inspection of partially machined wafers, including laser micromachining
 
 
Two-dimensional defect detection and measurement solution based on CAD
 
 
Detection of surface and crystal defects as well as exposure and injection errors, overlay errors and chip shifts, including critical dimension (CD) measurements
 
 
Wafer Yield Prediction Based on Advanced Defect Classification Algorithm